Please use this identifier to cite or link to this item: https://ri.ufs.br/jspui/handle/riufs/642
Full metadata record
DC FieldValueLanguage
dc.contributor.authorLima, Adilmo Francisco de-
dc.contributor.authorLalic, Milan-
dc.date.accessioned2013-07-15T18:52:09Z-
dc.date.available2013-07-15T18:52:09Z-
dc.date.issued2010-10-
dc.identifier.citationLIMA, A. F.; LALIC, M. V. Structural, electronic, and optical aspects of Cr doping of the Bi4Ge3O12: an ab initio study. Journal of Applied Physics, New York, v. 108, n. 8, out 2010. Disponível em: <http://dx.doi.org/10.1063/1.3500452>. Acesso em: 15 jul. 2013.pt_BR
dc.identifier.issn1089-7550-
dc.identifier.urihttp://dx.doi.org/10.1063/1.3500452-
dc.identifier.urihttps://ri.ufs.br/handle/riufs/642-
dc.description.abstractAb initio calculations based on density functional theory have been employed to study energetic, structural, electronic, and optical properties of Cr doped Bi4Ge3O12 (BGO). Two possible accommodations of Cr impurity have been taken into account: at the Ge (Cr4+) and the Bi (Cr3+) substitution site. For each accommodation the local structure around the Cr has been determined, and in the Cr3+ case the Cr off-site displacement was analyzed. The Cr d-states are positioned at the bottom of the conduction band and within the gap in form of two deeplike (Cr4+) and shallowlike (Cr3+) bands, exhibiting magnetic moments of +1.58 μB and −2.44 μB, respectively. The Cr dominated part of absorption spectrum is calculated and analyzed in terms of Cr band arrangement. Comparison with the experimental BGO:Cr absorption spectrum suggests that it consists of both Cr3+ and Cr4+ contributions, indicating the Cr simultaneous presence at both substitution sitespt_BR
dc.language.isoenpt_BR
dc.publisherAIP Publishingpt_BR
dc.subjectGermanato de bismutopt_BR
dc.subjectBi4Ge3O12pt_BR
dc.subjectPropriedades estruturaispt_BR
dc.subjectPropriedades eletrônicaspt_BR
dc.subjectPropriedades ópticaspt_BR
dc.titleStructural, electronic, and optical aspects of Cr doping of the Bi4Ge3O12: an ab initio studypt_BR
dc.typeArtigopt_BR
dc.identifier.license© 2010 American Institute of Physicspt_BR
Appears in Collections:DFCI - Artigos de periódicos

Files in This Item:
File Description SizeFormat 
StructuralElectronicBi4Ge3O12.pdf1,41 MBAdobe PDFThumbnail
View/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.