Please use this identifier to cite or link to this item:
https://ri.ufs.br/jspui/handle/riufs/21414
Document Type: | Trabalhos em Eventos |
Title: | Effects of transition metal impurities in alpha alumina: a theoretical study |
Authors: | Dantas, Jeânderson de Melo Lima, Adilmo Francisco de Lalic, Milan V. |
Issue Date: | 2010 |
Resumo : | Ab-initio calculations based on density functional theory have been employed to study the electronic and some optical properties of Y and Nb doped α-Al2O3 with corundum structure. The Nd presence elevates the static dielectric constant of the pure alumina, but changes significantly its band offset. Doping with Y preserves the band gap value and increases slightly the dielectric constant of the pure alumina, thus showing a potential to be used in semiconductor industry. |
Keywords: | Alpha alumina Semiconductors |
ISSN: | 1742-6596 1742-6588 |
Is part of: | Journal of Physics: Conference Series |
Language: | eng |
Publisher / Institution : | IOP Publishing |
Citation: | DANTAS, J. M.; LIMA, A. F.; LALIC, M. V. Effects of transition metal impurities in alpha alumina: a theoretical study. Journal of Physics: Conference Series, v. 249, 2010. Trabalho apresentado em 16º International Conference on Defects in Insulating Materials, 2008, [Aracaju]. Disponível em: https://iopscience.iop.org/article/10.1088/1742-6596/249/1/012036/pdf. Acesso em: 21 mar. 2025. |
License: | Creative Commons Atribuição 4.0 Internacional (CC BY 4.0) |
URI: | https://ri.ufs.br/jspui/handle/riufs/21414 |
Appears in Collections: | DFI - Artigos de periódicos DFI - Trabalhos apresentados em eventos |
Files in This Item:
File | Description | Size | Format | |
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TransitionMetalAlphaAlumina.pdf | 434,81 kB | Adobe PDF | ![]() View/Open |
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