Please use this identifier to cite or link to this item: https://ri.ufs.br/jspui/handle/riufs/21414
Document Type: Trabalhos em Eventos
Title: Effects of transition metal impurities in alpha alumina: a theoretical study
Authors: Dantas, Jeânderson de Melo
Lima, Adilmo Francisco de
Lalic, Milan V.
Issue Date: 2010
Resumo : Ab-initio calculations based on density functional theory have been employed to study the electronic and some optical properties of Y and Nb doped α-Al2O3 with corundum structure. The Nd presence elevates the static dielectric constant of the pure alumina, but changes significantly its band offset. Doping with Y preserves the band gap value and increases slightly the dielectric constant of the pure alumina, thus showing a potential to be used in semiconductor industry.
Keywords: Alpha alumina
Semiconductors
ISSN: 1742-6596
1742-6588
Is part of: Journal of Physics: Conference Series
Language: eng
Publisher / Institution : IOP Publishing
Citation: DANTAS, J. M.; LIMA, A. F.; LALIC, M. V. Effects of transition metal impurities in alpha alumina: a theoretical study. Journal of Physics: Conference Series, v. 249, 2010. Trabalho apresentado em 16º International Conference on Defects in Insulating Materials, 2008, [Aracaju]. Disponível em: https://iopscience.iop.org/article/10.1088/1742-6596/249/1/012036/pdf. Acesso em: 21 mar. 2025.
License: Creative Commons Atribuição 4.0 Internacional (CC BY 4.0)
URI: https://ri.ufs.br/jspui/handle/riufs/21414
Appears in Collections:DFI - Artigos de periódicos
DFI - Trabalhos apresentados em eventos

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