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https://ri.ufs.br/jspui/handle/riufs/21414| Tipo de Documento: | Trabalhos em Eventos |
| Título : | Effects of transition metal impurities in alpha alumina: a theoretical study |
| Autor : | Dantas, Jeânderson de Melo Lima, Adilmo Francisco de Lalic, Milan V. |
| Fecha de publicación : | 2010 |
| Resumen: | Ab-initio calculations based on density functional theory have been employed to study the electronic and some optical properties of Y and Nb doped α-Al2O3 with corundum structure. The Nd presence elevates the static dielectric constant of the pure alumina, but changes significantly its band offset. Doping with Y preserves the band gap value and increases slightly the dielectric constant of the pure alumina, thus showing a potential to be used in semiconductor industry. |
| Palabras clave : | Alpha alumina Semiconductors |
| ISSN : | 1742-6596 1742-6588 |
| Es parte de: | Journal of Physics: Conference Series |
| Idioma : | eng |
| Institución / Editorial : | IOP Publishing |
| Citación : | DANTAS, J. M.; LIMA, A. F.; LALIC, M. V. Effects of transition metal impurities in alpha alumina: a theoretical study. Journal of Physics: Conference Series, v. 249, 2010. Trabalho apresentado em 16º International Conference on Defects in Insulating Materials, 2008, [Aracaju]. Disponível em: https://iopscience.iop.org/article/10.1088/1742-6596/249/1/012036/pdf. Acesso em: 21 mar. 2025. |
| License: | Creative Commons Atribuição 4.0 Internacional (CC BY 4.0) |
| URI : | https://ri.ufs.br/jspui/handle/riufs/21414 |
| Aparece en las colecciones: | DFI - Artigos de periódicos DFI - Trabalhos apresentados em eventos |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| TransitionMetalAlphaAlumina.pdf | 434,81 kB | Adobe PDF |  Visualizar/Abrir |
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