Por favor, use este identificador para citar o enlazar este ítem: https://ri.ufs.br/jspui/handle/riufs/25548
Tipo de Documento: Artigo
Título : Permanent data storage in ZnO thin films by filamentary resistive switching
Autor : Melo, Adolfo Henrique Nunes
Macêdo, Marcelo Andrade
Fecha de publicación : 2016
Resumen: Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of nonrewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.
Palabras clave : Resistive random access memories
Nonrewritable resistive memories
High resistance state
ZnO thin films
ISSN : 1932-6203
Es parte de: PloS One
Idioma : eng
Institución / Editorial : Public Library of Science
Citación : MELO, A. H. N.; MACEDO, M. A. Permanent data storage in ZnO thin films by filamentary resistive switching. PloS One, San Francisco, v. 11, n. 12, 2016. Disponível em: https://journals.plos.org/plosone/article?id=10.1371/journal.pone.0168515. Acesso em: 14 jul. 2026.
License: Creative Commons Atribuição 4.0 Internacional (CC BY 4.0)
Identificador: https://doi.org/10.1371/journal.pone.0168515
URI : https://ri.ufs.br/jspui/handle/riufs/25548
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