Use este identificador para citar ou linkar para este item: https://ri.ufs.br/jspui/handle/riufs/25548
Tipo de Documento: Artigo
Título: Permanent data storage in ZnO thin films by filamentary resistive switching
Autor(es): Melo, Adolfo Henrique Nunes
Macêdo, Marcelo Andrade
Data do documento: 2016
Resumo: Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of nonrewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.
Palavras-chave: Resistive random access memories
Nonrewritable resistive memories
High resistance state
ZnO thin films
ISSN: 1932-6203
Parte de : PloS One
Idioma: eng
Instituição/Editora: Public Library of Science
Citação: MELO, A. H. N.; MACEDO, M. A. Permanent data storage in ZnO thin films by filamentary resistive switching. PloS One, San Francisco, v. 11, n. 12, 2016. Disponível em: https://journals.plos.org/plosone/article?id=10.1371/journal.pone.0168515. Acesso em: 14 jul. 2026.
Licença: Creative Commons Atribuição 4.0 Internacional (CC BY 4.0)
Identificador: https://doi.org/10.1371/journal.pone.0168515
URI: https://ri.ufs.br/jspui/handle/riufs/25548
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