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Use este identificador para citar ou linkar para este item: https://ri.ufs.br/jspui/handle/riufs/21543
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dc.contributor.authorLorenz, K.-
dc.contributor.authorAlves, E.-
dc.contributor.authorMagalhães, S.-
dc.contributor.authorPeres, M.-
dc.contributor.authorMonteiro, T.-
dc.contributor.authorKozanecki, A.-
dc.contributor.authorValerio, Mario Ernesto Giroldo-
dc.date.accessioned2025-04-04T00:26:55Z-
dc.date.available2025-04-04T00:26:55Z-
dc.date.issued2010-
dc.identifier.citationLORENZ, K. et al. Defect studies and optical activation of Yb doped GaN. Journal of Physics: Conference Series, v. 249, 2010. Trabalho apresentado em 16º International Conference on Defects in Insulating Materials, 2008, [Aracaju]. Disponível em: https://iopscience.iop.org/article/10.1088/1742-6596/249/1/012053/pdf. Acesso em: 3 abr. 2025.pt_BR
dc.identifier.issn1742-6596-
dc.identifier.issn1742-6588-
dc.identifier.urihttps://ri.ufs.br/jspui/handle/riufs/21543-
dc.languageengpt_BR
dc.publisherIOP Publishingpt_BR
dc.relation.ispartofJournal of Physics: Conference Seriespt_BR
dc.subjectGallium nitride (GaN)eng
dc.subjectWide band-gap semiconductorseng
dc.titleDefect studies and optical activation of Yb doped GaNpt_BR
dc.typeTrabalhos em Eventospt_BR
dc.identifier.licenseCreative Commons Atribuição 4.0 Internacional (CC BY 4.0)pt_BR
dc.description.resumoWide band-gap semiconductors, particularly III-nitrides, became one of the most studied materials during the last decades. These compounds are the base of a new generation of optoelectronic devices operating in the UV-Blue region of the electromagnetic spectrum. Incorporation of rare-earth (RE) ions into nitrides creates new routes to build all-nitride electroluminescent devices, using the sharp intra-4f n transitions of these elements. The introduction of the RE ions in the nitride lattice during the growth or by ion implantation creates defects which influence the optical behaviour of the doped region. In this work we report the results on Yb implanted GaN. A combination of techniques (Rutherford backscattering/Channeling and Photoluminescence) was used to assess the mechanisms responsible for the optical and structural behaviour of the doped materials. Lattice site location experiments showed that Yb is incorporated into positions slightly displaced from the Ga-site. Clearly the optical activity of the RE could be enhanced by orders of magnitude reducing the number of non-radiative recombination paths related with defects.pt_BR
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