Permanent data storage in ZnO thin films by filamentary resistive switching

Melo, Adolfo Henrique Nunes; Macêdo, Marcelo Andrade

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Campo DC	Valor	Idioma
dc.contributor.author	Melo, Adolfo Henrique Nunes	-
dc.contributor.author	Macêdo, Marcelo Andrade	-
dc.date.accessioned	2026-07-14T20:39:17Z	-
dc.date.available	2026-07-14T20:39:17Z	-
dc.date.issued	2016	-
dc.identifier.citation	MELO, A. H. N.; MACEDO, M. A. Permanent data storage in ZnO thin films by filamentary resistive switching. PloS One, San Francisco, v. 11, n. 12, 2016. Disponível em: https://journals.plos.org/plosone/article?id=10.1371/journal.pone.0168515. Acesso em: 14 jul. 2026.	pt_BR
dc.identifier.issn	1932-6203	-
dc.identifier.uri	https://ri.ufs.br/jspui/handle/riufs/25548	-
dc.language	eng	pt_BR
dc.publisher	Public Library of Science	pt_BR
dc.relation.ispartof	PloS One	pt_BR
dc.subject	Resistive random access memories	eng
dc.subject	Nonrewritable resistive memories	eng
dc.subject	High resistance state	eng
dc.subject	ZnO thin films	eng
dc.title	Permanent data storage in ZnO thin films by filamentary resistive switching	pt_BR
dc.type	Artigo	pt_BR
dc.identifier.license	Creative Commons Atribuição 4.0 Internacional (CC BY 4.0)	pt_BR
dc.description.resumo	Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of nonrewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.	pt_BR
dc.description.local	San Francisco	pt_BR
dc.identifier.doi	https://doi.org/10.1371/journal.pone.0168515	-
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