Effects of transition metal impurities in alpha alumina: a theoretical study

Dantas, Jeânderson de Melo; Lima, Adilmo Francisco de; Lalic, Milan V.

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Campo DC	Valor	Lengua/Idioma
dc.contributor.author	Dantas, Jeânderson de Melo	-
dc.contributor.author	Lima, Adilmo Francisco de	-
dc.contributor.author	Lalic, Milan V.	-
dc.date.accessioned	2025-03-21T13:54:03Z	-
dc.date.available	2025-03-21T13:54:03Z	-
dc.date.issued	2010	-
dc.identifier.citation	DANTAS, J. M.; LIMA, A. F.; LALIC, M. V. Effects of transition metal impurities in alpha alumina: a theoretical study. Journal of Physics: Conference Series, v. 249, 2010. Trabalho apresentado em 16º International Conference on Defects in Insulating Materials, 2008, [Aracaju]. Disponível em: https://iopscience.iop.org/article/10.1088/1742-6596/249/1/012036/pdf. Acesso em: 21 mar. 2025.	pt_BR
dc.identifier.issn	1742-6596	-
dc.identifier.issn	1742-6588	-
dc.identifier.uri	https://ri.ufs.br/jspui/handle/riufs/21414	-
dc.language	eng	pt_BR
dc.publisher	IOP Publishing	pt_BR
dc.relation.ispartof	Journal of Physics: Conference Series	pt_BR
dc.subject	Alpha alumina	eng
dc.subject	Semiconductors	eng
dc.title	Effects of transition metal impurities in alpha alumina: a theoretical study	pt_BR
dc.type	Trabalhos em Eventos	pt_BR
dc.identifier.license	Creative Commons Atribuição 4.0 Internacional (CC BY 4.0)	pt_BR
dc.description.resumo	Ab-initio calculations based on density functional theory have been employed to study the electronic and some optical properties of Y and Nb doped α-Al2O3 with corundum structure. The Nd presence elevates the static dielectric constant of the pure alumina, but changes significantly its band offset. Doping with Y preserves the band gap value and increases slightly the dielectric constant of the pure alumina, thus showing a potential to be used in semiconductor industry.	pt_BR
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