Please use this identifier to cite or link to this item: http://ri.ufs.br/jspui/handle/riufs/642
Document Type: Artigo
Title: Structural, electronic, and optical aspects of Cr doping of the Bi4Ge3O12: an ab initio study
Authors: Lima, Adilmo Francisco de
Lalic, Milan
Issue Date: Oct-2010
Abstract: Ab initio calculations based on density functional theory have been employed to study energetic, structural, electronic, and optical properties of Cr doped Bi4Ge3O12 (BGO). Two possible accommodations of Cr impurity have been taken into account: at the Ge (Cr4+) and the Bi (Cr3+) substitution site. For each accommodation the local structure around the Cr has been determined, and in the Cr3+ case the Cr off-site displacement was analyzed. The Cr d-states are positioned at the bottom of the conduction band and within the gap in form of two deeplike (Cr4+) and shallowlike (Cr3+) bands, exhibiting magnetic moments of +1.58 μB and −2.44 μB, respectively. The Cr dominated part of absorption spectrum is calculated and analyzed in terms of Cr band arrangement. Comparison with the experimental BGO:Cr absorption spectrum suggests that it consists of both Cr3+ and Cr4+ contributions, indicating the Cr simultaneous presence at both substitution sites
Keywords: Germanato de bismuto
Bi4Ge3O12
Propriedades estruturais
Propriedades eletrônicas
Propriedades ópticas
ISSN: 1089-7550
Publisher / Institution : AIP Publishing
Citation: LIMA, A. F.; LALIC, M. V. Structural, electronic, and optical aspects of Cr doping of the Bi4Ge3O12: an ab initio study. Journal of Applied Physics, New York, v. 108, n. 8, out 2010. Disponível em: <http://dx.doi.org/10.1063/1.3500452>. Acesso em: 15 jul. 2013.
License: © 2010 American Institute of Physics
URI: http://dx.doi.org/10.1063/1.3500452
https://ri.ufs.br/handle/riufs/642
Appears in Collections:DFCI - Artigos publicados em periódicos

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